Fabrication of silicon field emitters by forming porous silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 1906-1909

  Kim, Donghwan ^a   Kwon, Sang Jik ^b   Lee, Jong Duk ^a  

^a Seoul National University   (South Korea)

^b Gachon University College of Medicine   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009928868     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588952     Document Type: Article

References (5)

1. K. Betsui, Technical Digest of the Fourth IVMC, 1991 (unpublished), Vol. 4, pp. 26-29.
2. M. Tischler, R. Collins, J. Stathis, and J. Tsang, Appl. Phys. Lett. 60, 639 (1992).
3. R. Smith, D. Fulmer, and S. Collins, Proceeding of Symposium on Electrochem. Microfabrication, Phoenix, AZ, 13-18 October 1991 (unpublished).
4. R. Smith and S. Collins, J. Appl. Phys. 71, R1 (1991).
5. R. Thomas, R. Wickstrom, D. Schroder, and H. Nathanson, Solid-State Electron. 17, 155 (1974).