Gallium artefacts on FIB-milled silicon samples

Microelectronics Reliability

Volumn 44, Issue 9-11 SPEC. ISS., 2004, Pages 1583-1588

  Reiner, Joachim C ^a   Nellen, Philipp ^a   Sennhauser, Urs ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ELECTRON BEAMS; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; SURFACE TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; VACUUM;

FOCUSED ION BEAM MACHINE (FIB); REDEPOSITION; SHADOW EFFECT; SILICON SAMPLES;

ION BEAM ASSISTED DEPOSITION;

EID: 4544365184     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.07.073     Document Type: Conference Paper

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