Testing new chemistries for mask repair with focused ion beam gas assisted etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 3067-3071

  Stanishevsky, Andrei ^a,d   Edinger, Klaus ^a,e   Orloff, Jon ^a   Melngailis, John ^a   Stewart, Diane ^b   Williams, Alvina ^c   Clark, Richard ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b Thermo Fisher Scientific   (United States)

^c SEMATECH   (United States)

^d UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

^e NaWoTec GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ION BEAMS; IRRADIATION; LIGHT TRANSMISSION; MASKS; PARTIAL PRESSURE; PHOTOLITHOGRAPHY; SECONDARY EMISSION; SPUTTERING; ULTRAVIOLET RADIATION;

FOCUSED ION BEAMS (FIB); GAS ASSISTED ETCHING (GAE);

REACTIVE ION ETCHING;

EID: 0942278323     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1624253     Document Type: Conference Paper

References (12)

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