Investigation of 3D microfabrication characteristics by focused ion beam technology in silicon

Journal of Materials Processing Technology

Volumn 104, Issue 1, 2000, Pages 44-47

  Yongqi, Fu ^a   Bryan, Ngoi Kok Ann ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMMINUTION; CRYSTAL MICROSTRUCTURE; ETCHING; ION BEAMS; SEMICONDUCTING SILICON;

FOCUSED ION BEAM (FIB) TECHNOLOGY; FULL WIDTH AT HALF MAXIMUM (FWHM); GAUSSIAN DISTRIBUTION; MICROFABRICATION;

NANOTECHNOLOGY;

EID: 0034247871     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-0136(00)00544-6     Document Type: Article

References (3)

1. C. Friedrich, B. Kikkeri, Rapid fabrication of molds by mechanical micromilling: process development, SPIE 2640, 161.
2. Templeton I.M., Champion H.G. Focused ion-beam line profiles: a study of some factors affecting beam broadening. J. Vac. Sci. Technol. B. 13(6):1995;2603-2606.
3. Kalburge A., Konkar A., Ramachandran T.R., Chen P., Madhukar A. Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth. J. Appl. Phys. 82(2):1997;859-864.