Defect- and structure-weakness-localization on power semiconductors using OBIRCH (optical beam induced resistivity change)

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn 2002-January, Issue , 2002, Pages 152-156

  Jacob, P ^a,b  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b EM Microelectronic   (Switzerland)

Author keywords

Conducting materials; Conductors; Failure analysis; Laser theory; Metallization; Optical beams; Power semiconductor devices; Surface emitting lasers; Testing; Voltage

Indexed keywords

ELECTRIC CONDUCTORS; ELECTRIC POTENTIAL; ELECTRONIC EQUIPMENT TESTING; INTEGRATED CIRCUITS; LASER THEORY; MATERIALS TESTING; METALLIZING; OUTAGES; POWER ELECTRONICS; SEEBECK EFFECT; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SURFACE EMITTING LASERS; TESTING;

CONDUCTING MATERIALS; CRITICAL STRUCTURES; DOPING CONCENTRATION; EMISSION MICROSCOPY; OPTICAL BEAM INDUCED RESISTIVITY CHANGES; OPTICAL BEAMS; POWER SEMICONDUCTOR DEVICES; POWER SEMICONDUCTORS;

FAILURE ANALYSIS;

EID: 20344362013     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2002.1025636     Document Type: Conference Paper

References (5)

1. Kiyoshi Nikawa and Shoji Tozaki, ISTFA proceedings 1993 (ASM International), pp.303-310
2. Kiyoshi Nikawa and Shoij Inoue, "LSI failure analysis using focused laser beam heating" ESREF proceedings 1995 (Adera, France), pp. 307-312
3. Kiyoshi Nikawa, Kazuyuki Morimoto and Shoji Inoue, "Failure analysis using the IR-OBIRCH method", NEC Res&Developm. Vol 41, No. 4, Oct. 2000
4. Peter Jacob and Félix Beaudoin, "OBIRCH-Monitoring as a Reliability-Failure Analysis and Screening Tool", ISTFA proceedings 2001 (Santa Clara, Nov 2001)
5. Christian Boit, "Photonic Localization Techniques", ISTFA 2000 Tutorial (Sem. Reference Book, p.133-167)