Structure and stability of cobalt-silicon-germanium thin films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 133, Issue 1-4, 1997, Pages 84-89

  Goeller, Peter T ^a   Boyanov, Boyan I ^b   Savers, Dale E ^b   Nemanich, Robert J ^a,b  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Cobalt silicide; Metal semiconductor contacts; Molecular beam epitaxy; Silicon germanium alloys

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; COBALT COMPOUNDS; ELECTRIC CONDUCTIVITY MEASUREMENT; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR METAL BOUNDARIES; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

COBALT SILICIDE; EXTENDED X RAY ABSORPTION FINE STRUCTURE (EXAFS) SPECTROSCOPY; PINHOLE FORMATION;

SEMICONDUCTING FILMS;

EID: 0031550024     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00458-8     Document Type: Article

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