Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine

Journal of Crystal Growth

Volumn 270, Issue 3-4, 2004, Pages 322-328

  Chen, Gangyi ^a   Cheng, Dick ^a   Hicks, Robert F ^a   Noori, Atif M ^a   Hayashi, Sumiko L ^a   Goorsky, Mark S ^a   Kanjolia, Ravi ^b   Odedra, Raj ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Epichem Inc   (United States)

^c Epichem Ltd   (United Kingdom)

Author keywords

A1. Impurities; A3. Metalorganic vapor phase epitaxy; B1. Phosphides; B2. Semiconducting III V materials

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; APPROXIMATION THEORY; CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTAL IMPURITIES; LATTICE CONSTANTS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; VAPOR DEPOSITION; X RAY DIFFRACTION;

OXYGEN CONTAMINATION; PHOSPHIDES; PHOTOLUMINESCENCE SPECTROSCOPY (PL); SEMICONDUCTING III-V MATERIALS;

PHOSPHORUS COMPOUNDS;

EID: 4544330323     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.06.048     Document Type: Article

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