Correlation of reduced oxygen content in precursors with improved MOVPE layer quality

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 86-90

  Rushworth, S A ^a   Smith, L M ^a   Ravetz, M S ^a   Coward, K M ^a   Odedra, R ^a   Kanjolia, R ^b   Bland, S W ^c   Dimroth, F ^d   Bett, A W ^d  

^a Epichem Ltd   (United Kingdom)

^b Epichem Inc   (United States)

^c IQE INC   (United States)

^d FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

A1. Characterization; A1. Impurities; A3. Metalorganic vapor phase epitaxy; B1. Trimethylaluminium; B2. Semiconducting III V materials

Indexed keywords

DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEAR MAGNETIC RESONANCE; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS;

PRECURSORS;

CRYSTAL IMPURITIES;

EID: 0037292052     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01820-1     Document Type: Conference Paper

References (6)

1. Terao H., Sunakawa H. J. Crystal Growth. 68:1984;157.
2. Goorsky M.S., Keuch T.F., Cordone F., Mooney P.M., Scilla G.F., Potemski R.M. Appl. Phys. Letters. 58:1991;1979.
3. Roberts J.S., David J.P.R., Smith L., Tihanyi P.L. J. Crystal Growth. 195:1998;668.
4. Roberts J.S., Smith L.M., Tihanyi P.L. Proc. SPIE. 3947:2000;58.
5. Smith L.M., Rushworth S.A., Jones A.C., Roberts J.S., Chew A., Sykes D.E. J. Crystal Growth. 134:1993;140.
6. Hersee S.D., De Forte-Poisson M.A., Baldy M., Duchemin J.P. J. Crystal Growth. 55:1981;173.