Metalorganic chemical vapor deposition study using tertiarybutylphosphine and tertiarybutylarsine for InAlGaP light-emitting diode fabrication

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 A, 1997, Pages 4230-4234

  Mashita, Masao ^a   Ishikawa, Hironori ^a   Izumiya, Toshihide ^a   Hiraoka, Yoshiko Someya ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

InAlGaP; Light emitting diode; MOCVD; Tertiarybutylphosphine; Zn diffusion

Indexed keywords

TERTIARYBUTYLARSINE; TERTIARYBUTYLPHOSPHINE;

DIFFUSION; FABRICATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACES; VAPOR PRESSURE;

LIGHT EMITTING DIODES;

EID: 0031192897     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4230     Document Type: Article

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