Replacement of hydrides by TBAs and TBP for the growth of various III-V materials in production scale MOVPE reactors

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 97-102

  Beccard, R ^a   Lengeling, G ^a   Schmitz, D ^a   Gigase, Y ^a   Jurgensen H ^a  

^a AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; HYDRIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

MOVPE REACTORS;

CRYSTAL GROWTH;

EID: 0030707118     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00625-2     Document Type: Article

References (10)

1. D. Schmitz, G. Lengeling, G. Strauch, J. Hergeth and H. Jürgensen, J. Crystal Growth 124 (1992) 278.
2. B. Pelzer, W. Michel, G. Lengeling, G. Strauch, D. Schmitz and H. Jürgensen, in: Proc. of the 5th Int. Conf. on InP and Related Materials, Paris, April 1993, pp. 139-142.
3. P.J.A. Thijs, E.A. Montie and T. van Dongen, J. Crystal Growth 107 (1991) 731.
4. I. Gyuro, W. Kuebart, J.H. Reemtsma, H. Großkopf, F. Grotjahn, D. Kaiser and F. Buchali, Proc. EW-MOVPE V, Malmö, Sweden, June, 1993.
5. K.F. Jensen, D.I. Fotiadis and T.J. Mouniziaris, J. Crystal Growth 107 (1991) 1.
6. B. Pelzer, B. Marheineke, G. Lengeling, J. Knauf, W. Michel, G. Strauch, D. Schmitz and H. Jürgensen, Proc. EW-MOVPE V, Malmö, Sweden, June, 1993.
7. L. Hollan, P.M. Frijlink, H. Jürgensen, G. Strauch, G.A. Acket, H.P.M. Ambrosius, J.M. Marchai, Ch. Waucquez, J.F. Hernandez-Gil Gomez and E. Calleja Pardo, in: Proc. ESPRIT Conf., Brussels, Nov., 1991, pp. 135-151.
8. M. Dauelsberg, L. Kadinski, Yu.N. Makarov, E. Woelk, G. Strauch, D. Schmitz and H. Juergensen, in: Proc. 6th Int. Conf. on Silicon Carbide and Related Materials, Kyoto, Sept., 1995.
9. J.L. Zilko, P.S. Davisson, L. Luther and K.D.C. Trapp, J. Crystal Growth 124 (1992) 112.
10. T. Nakamura, S. Ae, T. Terakado, T. Torikai and T. Uji, Conf. Proc. of the 7th Int. Conf. on InP and Related Materials, Sapporo, May, 1994.