The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy

Journal of Crystal Growth

Volumn 270, Issue 3-4, 2004, Pages 359-363

  Wu, S D ^a   Guo, L W ^a   Wang, W X ^a   Li, Z H ^a   Shang, X Z ^a   Hu, H Y ^a   Huang, Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Computer simulation; A1. Growth models; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Semiconducting III V materials; B2. Semiconducting ternary compounds

Indexed keywords

ACTIVATION ENERGY; ANTIMONY; ARSENIC; BIPOLAR TRANSISTORS; COMPUTER SIMULATION; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; QUANTUM WELL LASERS; X RAY DIFFRACTION ANALYSIS;

GROWTH MODELS; SEMICONDUCTING III-V MATERIALS; SEMICONDUCTING TERNARY COMPOUNDS; WAVELENGTHS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4544293802     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.003     Document Type: Article

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