Competition between As and P for incorporation during gas-source molecular beam epitaxy of InGaAsP

Journal of Crystal Growth

Volumn 235, Issue 1-4, 2002, Pages 65-72

  Andre R ^a,b   Wey, S ^a   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LIPHY   (France)

Author keywords

A3. Molecular beam epitaxy; B1. Phosphides; B2. Semiconducting III V materials; B3. Infrared devices

Indexed keywords

ARSENIC; COMPOSITION EFFECTS; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; PHOSPHORUS;

FLOW RATES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036467296     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01789-4     Document Type: Article

References (12)

1. Gas source molecular beam epitaxy