The effect of electrical stress on the leakage current of polycrystalline Si thin-film transistors fabricated by metal-induced lateral crystallization

Thin Solid Films

Volumn 466, Issue 1-2, 2004, Pages 303-306

  Yoon, Yeo Geon ^a   Kim, Gi Bum ^a   Kim, Tae Kyung ^a   Lee, Byung Il ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

Electrical stress; Metal induced lateral crystallization; Polycrystalline Si; Thin film transistors

Indexed keywords

ANECHOIC CHAMBERS; CRYSTALLIZATION; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTROCHEMICAL ELECTRODES; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CRITICAL DRAIN VOLTAGE; ELECTRICAL STRESSES; ELECTRON INJECTION; METAL-INDUCED LATERAL CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 4544293442     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.037     Document Type: Article

References (15)

1. Lee S.W., Joo S.K. IEEE Electron Device Lett. 17:1996;160.
2. Kim H.S., Couillard J.G., Ast D.G. Appl. Phys. Lett. 72:1998;803.
3. Jin Z., Bhat G.A., Yeung M., Kwok H.S., Wong M. J. Appl. Phys. 84:1998;194.
4. Ihn T.H., Kim T.K., Lee B.I., Joo S.K. Microelectron. Reliab. 39:1999;53.
5. Bhat G.A., Jin Z., Kwok H.S., Wong M. IEEE Electron Device Lett. 20:1999;97.
6. Kim T.K., Ihn T.H., Lee B.I., Joo S.K. Jpn. J. Appl. Phys. 37:1998;4244.
7. Ihn T.H., Lee B.I., Joo S.K., Jeon Y.C. Jpn. J. Appl. Phys. 36:1997;5029.
8. Maegawa S., Ipposhi T., Maeda S., Nishimura H., Ichiki T., Ashida M., Tanina O., Inoue Y., Nishimura T., Tsubouchi N. IEEE Trans. Electron Devices. ED-42:1987;1106.
9. Meng Z., Wang M., Kwok H.S., Wong M. SID'99 Dig. 1999;386 Society for Information Display Headquarters, San Jose, California.
10. Colalongo L. IEEE Trans. Electron Devices. ED-44:1997;2106.
11. Shin H., Hong S., Wetteroth T., Wilson S.R., Schroder D.K. Appl. Phys. Lett. 72:1998;1199.
12. Shur M. Physics of Semiconductor Devices. 1990;Prentice-Hall, New Jersey.
13. Grove A.S. Physics and Technology of Semiconductor Devices. 1967;Wiley, New York.
14. Lewis A.G., Wu I.W., Hack M., Chiang A., Bruce R.H. IEDM' 91. 1991;575 International Electron Devices Society (IEEE), Operation Centre, New Jersey.
15. Wang M., Meng Z., Wong M. Appl. Phys. Lett. 76:2000;448.