Study on the leakage current of poly-Si TFTs fabricated by metal induced lateral crystallization

Microelectronics Reliability

Volumn 39, Issue 1, 1999, Pages 53-58

  Ihn, Tae Hyung ^a   Kim, Tae Kyung ^a   Lee, Byung Il ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

METAL INDUCED LATERAL CRYSTALLIZATION (MILC);

THIN FILM TRANSISTORS;

EID: 0032672503     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00160-7     Document Type: Article

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