Effect of an InGaAs layer in 1.3-μm GaAsSb/GaInAs type-II trilayer quantum-well lasers on GaAs substrates

Journal of the Korean Physical Society

Volumn 45, Issue 2, 2004, Pages 348-351

  Park, Seoung Hwan ^a   Hwang, In Duk ^b  

^a Catholic University of Daegu   (South Korea)

^b Daejeon University   (South Korea)

Author keywords

Diode laser; GaAs; GaAsSb; InGaAs; Quantum well; Self consistent; Trilayer; Type II

Indexed keywords

EID: 4544283416     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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