LEED intensity and surface core level shift analysis of the MBE-prepared GaAs(1̄1̄1̄)B(2 × 2) surface

Surface Science

Volumn 402-404, Issue , 1998, Pages 782-785

  Setzer, C ^a   Platen, J ^a   Bludau, H ^a   Gierer, M ^a   Over, H ^a   Jacobi, K ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

GaAs(1 1 1 ); Gallium arsenide; Low energy electron diffraction (LEED); Molecular beam epitaxy; Photoemission; Surface core level shifts

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRON ENERGY LEVELS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; SURFACE STRUCTURE;

SURFACE CORE LEVEL SHIFTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031633837     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)01060-1     Document Type: Article

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