Novel self-convergent programming method using source-induced band-to-band hot electron injection

IEEE Electron Device Letters

Volumn 23, Issue 11, 2002, Pages 652-654

  Pan, Liyang ^a   Zhu, Jun ^a   Liu, Zhihong ^a   Zeng, Ying ^a   Liu, Jianzhao ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Band to band (BTB); Flash memory; Self convergent program; Source induced band to band hot electron (SIBE)

Indexed keywords

ELECTRONS; FLASH MEMORY; LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

HOT ELECTRON INJECTIONS;

SOLID STATE PHYSICS;

EID: 0036865448     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.802603     Document Type: Article

References (10)

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