On the development of high-efficiency thin-film GaAs and GaInP2 cells

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 772-776

  van Deelen, J ^a   Bauhuis, G J ^a   Schermer, J J ^a   Mulder, P ^a   Haverkamp, E J ^a   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

A1. Doping; A1. Etching; A3. Metalorganic chemical vapor deposition; B1. Gallium Compounds; B2. Semiconducting III V materials; B3. Solar cells

Indexed keywords

DOPING (ADDITIVES); ETCHING; FILM GROWTH; GALLIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SOLAR CELLS; THIN FILMS;

CONVERSION EFFICIENCY; GAAS SUBSTRATES; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33846489742     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.094     Document Type: Article

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