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Volumn 2003-January, Issue , 2003, Pages 106-107
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Exfoliation of GaN layers using hydrogen implantation
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Author keywords
Annealing; Capacitive sensors; Crystallization; Gallium nitride; Hydrogen; Implants; Semiconductor materials; Space technology; Strain measurement; Substrates
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Indexed keywords
ANNEALING;
CAPACITIVE SENSORS;
CRYSTALLIZATION;
DENTAL PROSTHESES;
GALLIUM ALLOYS;
HYDROGEN;
NEURAL PROSTHESES;
SAPPHIRE;
SEMICONDUCTOR MATERIALS;
STRAIN MEASUREMENT;
SUBSTRATES;
CRYSTALLINITIES;
EXTENDED DEFECT;
GAN LAYERS;
HYDROGEN IMPLANTATION;
SAPPHIRE SUBSTRATES;
SPACE TECHNOLOGIES;
GALLIUM NITRIDE;
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EID: 84943516475
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ISCS.2003.1239928 Document Type: Conference Paper |
Times cited : (12)
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References (2)
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