Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Journal of Applied Physics

Volumn 103, Issue 11, 2008, Pages

  Chen, Tzu Pin ^a   Chen, Wei Hsin ^a   Lee, Chi Jhung ^a   Chu, Kuei Yi ^a   Chen, Li Yang ^a   Hung, Ching Wen ^a   Tsai, Tsung Han ^a   Cheng, Shiou Ying ^b   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL ILAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; CHARGED PARTICLES; ELECTRIC CONDUCTIVITY; ELECTRONS; HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION; IONIZATION OF GASES; PROTON IRRADIATION; TRANSISTORS; WAVE ENERGY CONVERSION;

AMERICAN INSTITUTE OF PHYSICS (AIP); BASE COLLECTORS; BREAK DOWN VOLTAGE (BDV); COLLECTOR (FLOTATION); COMMON EMITTER (CE); DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR (DHBT); ELECTRON IMPACT-IONIZATION; HYSTERESIS PHENOMENON; INALGAAS; INP/INGAAS; IONIZATION CHARACTERISTICS; MILLIMETER-WAVE (MM-WAVE); OUTPUT CONDUCTANCE; POWER CIRCUITS; TEMPERATURE DEPENDENT;

IMPACT IONIZATION;

EID: 45149119150     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2936964     Document Type: Article

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