Direct photo-etching of PMMA by focused EUV radiation from a compact laser plasma source

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6879, Issue , 2008, Pages

  Barkusky, Frank ^a   Bayer, Armin ^a   Peth, Christian ^a   Mann, Klaus ^a  

^a LASER LABORATORIUM GÖTTINGEN E V   (Germany)

Author keywords

13.5 nm; EUV optics; EUV source; Laser induced plasma; Micro focus; Mo Si; NEXAFS; Photo etching; PMMA; Schwarzschild objective

Indexed keywords

ELECTRIC DISCHARGES; ELECTRONICS INDUSTRY; LASER BEAMS; LASER OPTICS; LASER PRODUCED PLASMAS; LASERS; LIGHT; LIGHT SOURCES; LIGHTING; LITHOGRAPHY; MICROELECTRONICS; MULTILAYERS; PHOTONICS; PHOTONS; PLASMA (HUMAN); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA INTERACTIONS; PLASMA SOURCES; PLASMAS; PULSED LASER DEPOSITION; RADIATION; SURFACES; TECHNOLOGICAL FORECASTING; THIN FILMS; ULTRAVIOLET DEVICES; X RAY LITHOGRAPHY; X RAY OPTICS;

(1 1 0) SURFACE; AND DETECTION; DIRECT PHOTO-ETCHING; ENERGY DENSITIES; EUV RADIATION; EXTREME ULTRA-VIOLET LITHOGRAPHY (EUVL); FLUENCE; FOCAL SPOTS; HIGH-RESOLUTION MICROSCOPY; IMAGING OPTICS; IN ORDER; INTENSE LIGHT; LASER PLASMA SOURCE; LASER PLASMAS; LASER-INDUCED PLASMAS; LIGHT GUIDING; MULTI LAYER COATINGS; SCHWARZSCHILD OBJECTIVES; SOFT X RAY RADIATION; SPHERICAL MIRRORS; STRONG INTERACTIONS; TECHNOLOGICAL DEVELOPMENTS;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 45149103677     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.762553     Document Type: Conference Paper

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