Long dephasing time in self-assembled InAs quantum dots at over 1.3 μm wavelength

Applied Physics Letters

Volumn 88, Issue 26, 2006, Pages

  Ishi Hayase, J ^a   Akahane, K ^a   Yamamoto, N ^a   Sasaki, M ^a   Kujiraoka, M ^a,b   Ema, K ^b  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b SOPHIA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; EXTRAPOLATION; GROUND STATE; PHONONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

EXCITON GROUND-STATE; EXCITONIC DEPHASING; RESONANT EXCITATION; STRAIN-COMPENSATION TECHNIQUES;

SELF ASSEMBLY;

EID: 33745608783     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2217156     Document Type: Article

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