Interaction between point defects and dislocations in SiGe

Solid State Phenomena

Volumn 69, Issue , 1999, Pages 179-184

  Lyutovich, K ^a   Ernst, F ^b   Kasper, E ^a   Bauer, M ^a   Oehme, M ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; POINT DEFECTS; SEMICONDUCTOR GROWTH;

THIN BUFFER LAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032670053     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.69-70.179     Document Type: Article

References (4)

1. R. Hull and J.C. Bean, Crit. Rev. Sol. Stat. Mat. Sci., 17, 507 (1992).
2. C. Donolato, Journal of Applied Physics, 84, 2656 (1998).
3. E. Kasper, K. Lyutovich, M. Bauer, and M. Oehme, Thin Solid Films, 336, 319 (1998).
4. D. J. Eaglesham, Journal of Applied Physics, 77, 3597 (1995).