Highly uniform AlGaN/GaN power HEMT on a 3-inch conductive N-SiC substrate for wireless base station Application

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2005, Pages 77-80

  Kikkawa, Toshihide ^a   Imanishi, Kenji ^a   Kanamura, Masahito ^a   Joshin, Kazukiyo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

AIN; Base station; GaN; HEMT; Power amplifier; SiC; W CDMA

Indexed keywords

ALUMINUM NITRIDE; CODE DIVISION MULTIPLE ACCESS; COSTS; GALLIUM NITRIDE; GATES (TRANSISTOR); POWER AMPLIFIERS; TRANSCONDUCTANCE; WIRELESS TELECOMMUNICATION SYSTEMS;

POWER ADDED EFFICIENCY (PAE); POWER DENSITY; WIRELESS BASE STATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 30944458245     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2005.1531765     Document Type: Conference Paper

References (3)

1. T. Kikkawa, "Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifer," Japanese Journal Appl. Phys., 44 (2005) pp. 4896-4901.
2. M. Kanamura, T. Kikkawa, and K. Joshin, "A 100 W High-Gain AlGaN/ GaN HEMT Power Amplifier on a Conductive N-SiC Substrate for Wireless Base Station Applications," 2004 IEDM Tech. Dig., pp. 799-802.
3. T. Kikkawa, N. Nagahara, N. Okamoto Y. Tateno, Y. Yamgaguchi, N. Hara, K. Joshin, and P. M. Asbeck, "Surface-Charge-Controlled AlGaN/GaN-Power HFET without Current Collapse and Gm Dispersion," 2001 IEDM Tech. Dig., pp. 585-588.