-
1
-
-
0026264187
-
Diode laser degradation mechanisms: A review
-
R. G. Waters “Diode laser degradation mechanisms: A review,” Prog. Quantum Electron., vol. 15, pp. 153–174, 1991.
-
(1991)
Prog. Quantum Electron.
, vol.15
, pp. 153-174
-
-
Waters, R.G.1
-
4
-
-
4243545917
-
Degradation of III-V opto-electronic devices
-
O. Ueda, “Degradation of III-V opto-electronic devices,” J. Electrochem. Soc., vol. 135, pp. 11C-22C, 1988.
-
(1988)
J. Electrochem. Soc.
, vol.135
, pp. 11C-22C
-
-
Ueda, O.1
-
5
-
-
0021899605
-
-
R. K. Willardson and A. C. Beer, Eds. New York:Academic
-
P. M. Petroff, Semiconductors and Semimetals, vol. 22A, R. K. Willardson and A. C. Beer, Eds. New York:Academic, 1985, pp. 379–403.
-
(1985)
vol. 22A
, pp. 379-403
-
-
Petroff, P.M.1
-
6
-
-
21544482401
-
Charge collection scanning electron microscopy
-
H. J. Leamy, “Charge collection scanning electron microscopy,” J. Appl. Phys., vol. 53, pp. R51-R80, 1982.
-
(1982)
J. Appl. Phys.
, vol.53
, pp. R51-R80
-
-
Leamy, H.J.1
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7
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0026374712
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Evaluation of diode laser failure mechanisms and factors influencing reliability
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J. A. Baumann, A. H. Shepard, R. G. Waters, S. L. Yellen, C. M. Harding, and H. B. Serreze “Evaluation of diode laser failure mechanisms and factors influencing reliability,” Laser Diode Technology and Applications IV, Proc., SPIE, vol. 1418, pp. 328–337, 1991.
-
(1991)
Laser Diode Technology and Applications IV, Proc., SPIE
, vol.1418
, pp. 328-337
-
-
Baumann, J.A.1
Shepard, A.H.2
Waters, R.G.3
Yellen, S.L.4
Harding, C.M.5
Serreze, H.B.6
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8
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0025701960
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20,000 hour InGaAs quantum well lasers
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S. L. Yellen, R. G. Waters, Y. C. Chen, B. A. Soltz, S. E. Fischer, D. Fekete, and J. M. Ballantyne “20,000 hour InGaAs quantum well lasers,” Electron. Lett., vol. 26, pp. 2083–2084, 1990.
-
(1990)
Electron. Lett.
, vol.26
, pp. 2083-2084
-
-
Yellen, S.L.1
Waters, R.G.2
Chen, Y.C.3
Soltz, B.A.4
Fischer, S.E.5
Fekete, D.6
Ballantyne, J.M.7
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9
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0026121946
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Reliable InGaAs quantum well lasers at 1.1 µ m
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S. L. Yellen, R. G. Waters, P. K. York, K. J. Beernink, and J. J. Coleman “Reliable InGaAs quantum well lasers at 1.1 µ m,” Electron. Lett., vol. 27, pp. 552–553, 1991.
-
(1991)
Electron. Lett.
, vol.27
, pp. 552-553
-
-
Yellen, S.L.1
Waters, R.G.2
York, P.K.3
Beernink, K.J.4
Coleman, J.J.5
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10
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0025472776
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Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers
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Aug.
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R. G. Waters, D. P. Bour, S. L. Yellen, and N. F. Ruggieri “Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers,” IEEE Photon. Technol. Lett., vol. 2, pp. 531–533, Aug. 1990.
-
(1990)
IEEE Photon. Technol. Lett.
, vol.2
, pp. 531-533
-
-
Waters, R.G.1
Bour, D.P.2
Yellen, S.L.3
Ruggieri, N.F.4
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11
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0016534234
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Dislocation pinning in GaAs by the deliberate introduction of impurities
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July
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P. A. Kirkby “Dislocation pinning in GaAs by the deliberate introduction of impurities,” IEEE J. Quantum Electron., vol. QE-11, pp. 562–568, July 1975.
-
(1975)
IEEE J. Quantum Electron.
, vol.QE-11
, pp. 562-568
-
-
Kirkby, P.A.1
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12
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0000775571
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Characterization of InGaAs-GaAs strained-layer layer lasers with quantum wells near the critical thickness
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K. J. Beernink, P. K. York, J. J. Coleman, R. G. Waters, J. Kim, and C. M. Wayman “Characterization of InGaAs-GaAs strained-layer layer lasers with quantum wells near the critical thickness,” Appl. Phys. Lett., vol. 55, pp. 2167–2169, 1989.
-
(1989)
Appl. Phys. Lett.
, vol.55
, pp. 2167-2169
-
-
Beernink, K.J.1
York, P.K.2
Coleman, J.J.3
Waters, R.G.4
Kim, J.5
Wayman, C.M.6
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13
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36549097427
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Quantum well lasers in operation for four years
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R. G. Waters and S. L. Yellen “Quantum well lasers in operation for four years,” Appl. Phys. Lett., vol. 57, pp. 2644–2645, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 2644-2645
-
-
Waters, R.G.1
Yellen, S.L.2
-
14
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0026155682
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Dark-line-resistant diode laser at 0.8 µm comprising InAlGaAs strained quantum well
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May
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R. G. Waters, R. J. Dalby, J. A. Baumann, J. L. DeSanctis, and A. H. Shepard “Dark-line-resistant diode laser at 0.8 µm comprising InAlGaAs strained quantum well,” IEEE Photon. Technol. Lett., vol. 3, pp. 409–411, May 1991.
-
(1991)
IEEE Photon. Technol. Lett.
, vol.3
, pp. 409-411
-
-
Waters, R.G.1
Dalby, R.J.2
Baumann, J.A.3
DeSanctis, J.L.4
Shepard, A.H.5
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15
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0026171491
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High-power 0.8 µm InGaAsP-GaAs SCH SQW lasers
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June
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D. Z. Garbuzov, N. Y. Antonishkis, A. D. Bondarev, A. B. Gulakov, S. N. Zhigulin, N. I. Katsavets, A. V. Kochergin, and E. V. Rafailov “High-power 0.8 µm InGaAsP-GaAs SCH SQW lasers,” IEEE J. Quantum Electron., vol. 27, pp. 1531–1536, June 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 1531-1536
-
-
Garbuzov, D.Z.1
Antonishkis, N.Y.2
Bondarev, A.D.3
Gulakov, A.B.4
Zhigulin, S.N.5
Katsavets, N.I.6
Kochergin, A.V.7
Rafailov, E.V.8
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16
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0024719085
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High-power (1W, cw) single-lobe operation of LPE grown GaInAsP/GaInP (λ = 0.8 µ m) separate-confinement single-quantum-well broad-area lasers
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D. Z. Garbuzov, A. V. Kochergin, E. U. Rafailov, N. A. Strugov, and P. Gavrilovic “High-power (1W, cw) single-lobe operation of LPE grown GaInAsP/GaInP (λ = 0.8 µ m) separate-confinement single-quantum-well broad-area lasers,” Electron. Lett., vol. 25, pp. 1239–1240, 1989.
-
(1989)
Electron. Lett.
, vol.25
, pp. 1239-1240
-
-
Garbuzov, D.Z.1
Kochergin, A.V.2
Rafailov, E.U.3
Strugov, N.A.4
Gavrilovic, P.5
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17
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0010320276
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High-power, very low threshold, GaInP/AlGaInP visible diode lasers
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H. B. Serreze, Y. C. Chen, and R. G. Waters “High-power, very low threshold, GaInP/AlGaInP visible diode lasers,” Appl. Phys. Lett., vol. 58, pp. 2464–2466, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 2464-2466
-
-
Serreze, H.B.1
Chen, Y.C.2
Waters, R.G.3
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