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Volumn 1, Issue , 2005, Pages 420-422

High-brightness, high-efficiency 940-980nm InGaAs/AlGaAs/GaAs broad waveguide diode lasers

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

EID: 30844451019     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cleo.2005.201799     Document Type: Conference Paper
Times cited : (8)

References (7)
  • 1
    • 20544462283 scopus 로고    scopus 로고
    • High-power (>10W) continuous-wave-operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers
    • A.Al-Muhanna, L.J.Mawst, D. Bottezz, D.Z. Garbuzove, R.U. Martinelli, and J.C. Conolly, "High-power (>10W) continuous-wave-operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers", Appl. Phys. Lett., Vol. 73, pp. 1182-1184, 1998.
    • (1998) Appl. Phys. Lett. , vol.73 , pp. 1182-1184
    • Al-Muhanna, A.1    Mawst, L.J.2    Bottezz, D.3    Garbuzove, D.Z.4    Martinelli, R.U.5    Conolly, J.C.6
  • 3
    • 0032646451 scopus 로고    scopus 로고
    • Super high power operation of 0.98 μm InGaAs(P)-InGaP/GaAs broadened waveguide separate confinement heterostructure quantum well diode lasers
    • D.Z. Garbuzov, M.A. Majorov, V.Khalfin, M.G.Harvey, L.J.Mawst, D.Botez, and J.C.Connolly, "Super high power operation of 0.98 μm InGaAs(P)-InGaP/GaAs broadened waveguide separate confinement heterostructure quantum well diode lasers", Proc. SPIE, Vol. 3625,pp803-810, 1999.
    • (1999) Proc. SPIE , vol.3625 , pp. 803-810
    • Garbuzov, D.Z.1    Majorov, M.A.2    Khalfin, V.3    Harvey, M.G.4    Mawst, L.J.5    Botez, D.6    Connolly, J.C.7
  • 4
    • 0034217323 scopus 로고    scopus 로고
    • Design consideration and performance of high-power and high-brihtness IngaAs-InCaAsP-AlGaas quantum well diode lasers (λ=0.98 μm)
    • G.W.Yang, R.Jennifer Hwu, Z.T. Xu, X.Y.Ma, "Design consideration and performance of high-power and high-brihtness IngaAs-InCaAsP-AlGaas quantum well diode lasers (λ=0.98 μm)". IEEE Journal of selected topics in quantum electronics. Vol. 16,pp577-584, 2000.
    • (2000) IEEE Journal of Selected Topics in Quantum Electronics , vol.16 , pp. 577-584
    • Yang, G.W.1    Hwu, R.J.2    Xu, Z.T.3    Ma, X.Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.