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1
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29144534966
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High-power Semiconductor Red Laser Array for Use in Photodynamic Therapy
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I. Charamisinau, G. S. Happawana, G. A. Evans, J. B. Kirk, D. P. Bour, A. Rosen, R. A. His, "High-power Semiconductor Red Laser Array for Use in Photodynamic Therapy", IEEE Journal of Selected Topics in Quantum Electronics, 111, 881-890 (2005)
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IEEE Journal of Selected Topics in Quantum Electronics
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Charamisinau, I.1
Happawana, G.S.2
Evans, G.A.3
Kirk, J.B.4
Bour, D.P.5
Rosen, A.6
His, R.A.7
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2
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0032484794
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High power 635 nm low-divergence ridge waveguide singlemode lasers
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B. Lu, J. S. Osinski, E. Vail, B. Pezeshki, B. Schmitt, R. J. Lang "High power 635 nm low-divergence ridge waveguide singlemode lasers" Electronics Letters 34, 272-273 (1998)
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Electronics Letters
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Lu, B.1
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Vail, E.3
Pezeshki, B.4
Schmitt, B.5
Lang, R.J.6
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3
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0031120130
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Highly reliable 60°C 50-mW operation of 650-nm band window-mirror laser diodes
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A. Shima, H. Tada, K. Ono, M. Fujiwara, T. Utakouji, T. Kimura, M. Takemi, H. Higuchi "Highly reliable 60°C 50-mW operation of 650-nm band window-mirror laser diodes IEEE Photonics Technology Letters 9, 413-415 (1997)
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IEEE Photonics Technology Letters
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Shima, A.1
Tada, H.2
Ono, K.3
Fujiwara, M.4
Utakouji, T.5
Kimura, T.6
Takemi, M.7
Higuchi, H.8
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4
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10244257531
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High-power and High-Temperature Operation of Mg-Doped AlGaInP-Based Red Laser Diodes
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T. Onishi, K. Inoue, K. Onozawa, T. Takayama, M. Yuri, "High-power and High-Temperature Operation of Mg-Doped AlGaInP-Based Red Laser Diodes", IEEE Journal of Quantum Electronics, 40, 1634-1638 (2004)
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Onishi, T.1
Inoue, K.2
Onozawa, K.3
Takayama, T.4
Yuri, M.5
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5
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0027910915
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Reliable 1.2 W cw red-emitting (Al)GaInP diode laser array with AlGaAs cladding layers
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H. Jaeckel, G. L. Bona, H. Richard, P. Roentgen, P. Unger "Reliable 1.2 W cw red-emitting (Al)GaInP diode laser array with AlGaAs cladding layers Electronics Letters, 29, 101-102 (1993)
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Electronics Letters
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Jaeckel, H.1
Bona, G.L.2
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Roentgen, P.4
Unger, P.5
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6
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0032635714
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High power 600 nm range lasers grown by solid source molecular beam epitaxy, In-Plane Semiconductor Lasers III
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S. Orsila, M. Toivonen, P. Savolainen, V. Vilokkinen, P. Melanen, M. Pessa, M. Saarinen, P. Uusimaa, P. Corvini, F. Fang, M. Jansen, R. Nabiev, "High power 600 nm range lasers grown by solid source molecular beam epitaxy", In-Plane Semiconductor Lasers III, Proceedings of SPIE VoL 3628, 203-208 (1999)
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Saarinen, M.7
Uusimaa, P.8
Corvini, P.9
Fang, F.10
Jansen, M.11
Nabiev, R.12
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7
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12344269065
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SS-MBE grown short red wavelength range AlGaInP laser structures Semiconductor Lasers and Laser Dynamics
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edited by Daan Lenstra, Geert Morthier, Thomas Emeux, Markus Pessa, SPIE, Bellingham, WA
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L. Toikkanen, M. Dumitrescu, A. Tukiainen, S. Viitala, M. Suominen, V. Erojärvi, V. Rimpiläinen, R. Rönkkö, M. Pessa, "SS-MBE grown short red wavelength range AlGaInP laser structures" Semiconductor Lasers and Laser Dynamics, edited by Daan Lenstra, Geert Morthier, Thomas Emeux, Markus Pessa, Proceedings of SPIE Vol. 5452 (SPIE, Bellingham, WA, 2004), 199-205 (2004)
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Proceedings of SPIE
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Toikkanen, L.1
Dumitrescu, M.2
Tukiainen, A.3
Viitala, S.4
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Erojärvi, V.6
Rimpiläinen, V.7
Rönkkö, R.8
Pessa, M.9
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8
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35348992220
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3 W - broad area lasers and 12 W - bars with conversion efficiencies up to 40% at 650 nm
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B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, A. Ginolas, K. Paschke, G. Erbert, M. Weyers, and G. Tränkle "3 W - broad area lasers and 12 W - bars with conversion efficiencies up to 40% at 650 nm" IEEE Journal of Selected Topics in Quantum Electronics 13, 1188-1193 (2007)
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(2007)
IEEE Journal of Selected Topics in Quantum Electronics
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Sumpf, B.1
Zorn, M.2
Staske, R.3
Fricke, J.4
Ressel, P.5
Ginolas, A.6
Paschke, K.7
Erbert, G.8
Weyers, M.9
Tränkle, G.10
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9
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44949237720
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B. Sumpf, M. Zorn, M. Maiwald, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle 5.6 W broad area lasers with a vertical far field angle of 31° emitting at 670 nm submitted to Photonics Technology Letters (2007)
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B. Sumpf, M. Zorn, M. Maiwald, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle "5.6 W broad area lasers with a vertical far field angle of 31° emitting at 670 nm" submitted to Photonics Technology Letters (2007)
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10
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44949086310
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1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm
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B. Sumpf, M. Zorn, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle; "1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm"; Photonics West 2008
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(2008)
Photonics West
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Sumpf, B.1
Zorn, M.2
Fricke, J.3
Ressel, P.4
Erbert, G.5
Weyers, M.6
Tränkle, G.7
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11
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0033736986
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B. Pezeshki, M. Hagberg, B. Lu, M. Zeleinski, S. Zou, E. Kolev; High Power and Diffraction-Limited Red Lasers In-Plane Semiconductor Lasers IV, Editors: L. J. Mawst, R. U. Martinelli; Proceedings of SPIE 3947; 80-90 (2000)
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B. Pezeshki, M. Hagberg, B. Lu, M. Zeleinski, S. Zou, E. Kolev; "High Power and Diffraction-Limited Red Lasers" In-Plane Semiconductor Lasers IV, Editors: L. J. Mawst, R. U. Martinelli; Proceedings of SPIE Vol. 3947; 80-90 (2000)
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12
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34248672015
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900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm
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N. Linder, R. Butendeich, W. Schmid, S. Tautz, K. Streubel, C. Karnutsch, S. Rurländer, H. Schweizer, F. Scholz, "900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm"; Conference on Lasers and Electro-Optics, 2004; CMJ1
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(2004)
Conference on Lasers and Electro-Optics
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Linder, N.1
Butendeich, R.2
Schmid, W.3
Tautz, S.4
Streubel, K.5
Karnutsch, C.6
Rurländer, S.7
Schweizer, H.8
Scholz, F.9
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13
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34248635145
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B. Sumpf, G. Erbert, J. Fricke, P. Froese, R. Häring, W. G. Kaenders, A. Klehr, F. Lison, P. Ressel, H. Wenzel, M. Weyers, M. Zorn, G. Tränkle 670 nm tapered lasers and amplifiers with output powers Pa ≥ 1 and nearly diffraction limited beam quality Novel In-Plane Semiconductor Lasers VI, edited by Carmen Mermelstein, David P. Bour, Proceedings SPIE 6485,648517-1-648517-8 (2007)
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B. Sumpf, G. Erbert, J. Fricke, P. Froese, R. Häring, W. G. Kaenders, A. Klehr, F. Lison, P. Ressel, H. Wenzel, M. Weyers, M. Zorn, G. Tränkle "670 nm tapered lasers and amplifiers with output powers Pa ≥ 1 and nearly diffraction limited beam quality" Novel In-Plane Semiconductor Lasers VI, edited by Carmen Mermelstein, David P. Bour, Proceedings SPIE Vol. 6485,648517-1-648517-8 (2007)
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14
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44949180514
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R. Häring, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W. G. Kaenders 670 nm semiconductor lasers for Lithium spectroscopy with 1 W Novel In-Plane Semiconductor Lasers VI, edited by Carmen Mermelstein, David P. Bour, Proceedings SPIE 6485, 648516-1 - 648516-6 (2007)
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R. Häring, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W. G. Kaenders "670 nm semiconductor lasers for Lithium spectroscopy with 1 W" Novel In-Plane Semiconductor Lasers VI, edited by Carmen Mermelstein, David P. Bour, Proceedings SPIE Vol. 6485, 648516-1 - 648516-6 (2007)
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15
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33846420640
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High-power red laser diodes grown by MOVPE
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M. Zorn, H. Wenzel, U. Zeimer, B. Sumpf, G. Erbert, M. Weyers, "High-power red laser diodes grown by MOVPE", Journal of Crystal Growth 298, 667-671 (2007)
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(2007)
Journal of Crystal Growth
, vol.298
, pp. 667-671
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Zorn, M.1
Wenzel, H.2
Zeimer, U.3
Sumpf, B.4
Erbert, G.5
Weyers, M.6
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16
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18944377635
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Novel Passivation Process for the Mirror Facets of High-Power Semiconductor Diode Lasers
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P. Ressel, G. Erbert, U. Zeimer, K. Häusler, G. Beister, B. Sumpf, A. Klehr, G. Tränkle, "Novel Passivation Process for the Mirror Facets of High-Power Semiconductor Diode Lasers", IEEE Photonics Technology Letters 17, 962-964 (2005)
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(2005)
IEEE Photonics Technology Letters
, vol.17
, pp. 962-964
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Ressel, P.1
Erbert, G.2
Zeimer, U.3
Häusler, K.4
Beister, G.5
Sumpf, B.6
Klehr, A.7
Tränkle, G.8
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17
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0035521195
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Mounting of high power laser diodes on Boron Nitride heat sinks using an optimized Au/Sn metallurgy
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W. Pittroff, G. Erbert, G. Beister, F. Bugge, A. Klein, A. Knauer, J. Maege, P. Ressel, J. Sebastian, R. Staske, G. Tränkle, "Mounting of high power laser diodes on Boron Nitride heat sinks using an optimized Au/Sn metallurgy", IEEE Transactions on Advanced Packaging, 24, 434-441 (2001)
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(2001)
IEEE Transactions on Advanced Packaging
, vol.24
, pp. 434-441
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Pittroff, W.1
Erbert, G.2
Beister, G.3
Bugge, F.4
Klein, A.5
Knauer, A.6
Maege, J.7
Ressel, P.8
Sebastian, J.9
Staske, R.10
Tränkle, G.11
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18
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44949173715
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R. Häring, T. Schmitt, A. Able, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W. G. Kaenders cw, 325 nm, 100 mW semiconductor laser system as potential substitute for HeCd gas lasers Photonics West 2008
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R. Häring, T. Schmitt, A. Able, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W. G. Kaenders "cw, 325 nm, 100 mW semiconductor laser system as potential substitute for HeCd gas lasers" Photonics West 2008
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