메뉴 건너뛰기




Volumn 6876, Issue , 2008, Pages

650 nm tapered lasers with 1 W maximum output power and nearly diffraction limited beam quality at 500 mW

Author keywords

Diffraction limited; High power diode lasers; Red lasers; Reliability; Tapered lasers

Indexed keywords

ALGAINP; BEAM PROPAGATION RATIO; CLADDING LAYERS; CW OPERATION; DIFFRACTION LIMITED; HIGH POWERS; HIGH-BRIGHTNESS (HB); MAXIMUM OUTPUT POWER; MW OUTPUT; OPERATING CURRENTS; OUTPUT POWERS; RELIABILITY TESTING; RIDGE WAVEGUIDE (RWG); SINGLE QUANTUM WELL (SQW); TAPER ANGLES; TAPERED LASERS; TAPERED STRUCTURES; VERTICAL STRUCTURES; WAVEGUIDE LAYERS;

EID: 44949115990     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.761575     Document Type: Conference Paper
Times cited : (14)

References (18)
  • 5
    • 0027910915 scopus 로고
    • Reliable 1.2 W cw red-emitting (Al)GaInP diode laser array with AlGaAs cladding layers
    • H. Jaeckel, G. L. Bona, H. Richard, P. Roentgen, P. Unger "Reliable 1.2 W cw red-emitting (Al)GaInP diode laser array with AlGaAs cladding layers Electronics Letters, 29, 101-102 (1993)
    • (1993) Electronics Letters , vol.29 , pp. 101-102
    • Jaeckel, H.1    Bona, G.L.2    Richard, H.3    Roentgen, P.4    Unger, P.5
  • 7
    • 12344269065 scopus 로고    scopus 로고
    • SS-MBE grown short red wavelength range AlGaInP laser structures Semiconductor Lasers and Laser Dynamics
    • edited by Daan Lenstra, Geert Morthier, Thomas Emeux, Markus Pessa, SPIE, Bellingham, WA
    • L. Toikkanen, M. Dumitrescu, A. Tukiainen, S. Viitala, M. Suominen, V. Erojärvi, V. Rimpiläinen, R. Rönkkö, M. Pessa, "SS-MBE grown short red wavelength range AlGaInP laser structures" Semiconductor Lasers and Laser Dynamics, edited by Daan Lenstra, Geert Morthier, Thomas Emeux, Markus Pessa, Proceedings of SPIE Vol. 5452 (SPIE, Bellingham, WA, 2004), 199-205 (2004)
    • (2004) Proceedings of SPIE , vol.5452 , pp. 199-205
    • Toikkanen, L.1    Dumitrescu, M.2    Tukiainen, A.3    Viitala, S.4    Suominen, M.5    Erojärvi, V.6    Rimpiläinen, V.7    Rönkkö, R.8    Pessa, M.9
  • 9
    • 44949237720 scopus 로고    scopus 로고
    • B. Sumpf, M. Zorn, M. Maiwald, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle 5.6 W broad area lasers with a vertical far field angle of 31° emitting at 670 nm submitted to Photonics Technology Letters (2007)
    • B. Sumpf, M. Zorn, M. Maiwald, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle "5.6 W broad area lasers with a vertical far field angle of 31° emitting at 670 nm" submitted to Photonics Technology Letters (2007)
  • 10
    • 44949086310 scopus 로고    scopus 로고
    • 1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm
    • B. Sumpf, M. Zorn, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle; "1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm"; Photonics West 2008
    • (2008) Photonics West
    • Sumpf, B.1    Zorn, M.2    Fricke, J.3    Ressel, P.4    Erbert, G.5    Weyers, M.6    Tränkle, G.7
  • 11
    • 0033736986 scopus 로고    scopus 로고
    • B. Pezeshki, M. Hagberg, B. Lu, M. Zeleinski, S. Zou, E. Kolev; High Power and Diffraction-Limited Red Lasers In-Plane Semiconductor Lasers IV, Editors: L. J. Mawst, R. U. Martinelli; Proceedings of SPIE 3947; 80-90 (2000)
    • B. Pezeshki, M. Hagberg, B. Lu, M. Zeleinski, S. Zou, E. Kolev; "High Power and Diffraction-Limited Red Lasers" In-Plane Semiconductor Lasers IV, Editors: L. J. Mawst, R. U. Martinelli; Proceedings of SPIE Vol. 3947; 80-90 (2000)
  • 13
    • 34248635145 scopus 로고    scopus 로고
    • B. Sumpf, G. Erbert, J. Fricke, P. Froese, R. Häring, W. G. Kaenders, A. Klehr, F. Lison, P. Ressel, H. Wenzel, M. Weyers, M. Zorn, G. Tränkle 670 nm tapered lasers and amplifiers with output powers Pa ≥ 1 and nearly diffraction limited beam quality Novel In-Plane Semiconductor Lasers VI, edited by Carmen Mermelstein, David P. Bour, Proceedings SPIE 6485,648517-1-648517-8 (2007)
    • B. Sumpf, G. Erbert, J. Fricke, P. Froese, R. Häring, W. G. Kaenders, A. Klehr, F. Lison, P. Ressel, H. Wenzel, M. Weyers, M. Zorn, G. Tränkle "670 nm tapered lasers and amplifiers with output powers Pa ≥ 1 and nearly diffraction limited beam quality" Novel In-Plane Semiconductor Lasers VI, edited by Carmen Mermelstein, David P. Bour, Proceedings SPIE Vol. 6485,648517-1-648517-8 (2007)
  • 14
    • 44949180514 scopus 로고    scopus 로고
    • R. Häring, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W. G. Kaenders 670 nm semiconductor lasers for Lithium spectroscopy with 1 W Novel In-Plane Semiconductor Lasers VI, edited by Carmen Mermelstein, David P. Bour, Proceedings SPIE 6485, 648516-1 - 648516-6 (2007)
    • R. Häring, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W. G. Kaenders "670 nm semiconductor lasers for Lithium spectroscopy with 1 W" Novel In-Plane Semiconductor Lasers VI, edited by Carmen Mermelstein, David P. Bour, Proceedings SPIE Vol. 6485, 648516-1 - 648516-6 (2007)
  • 18
    • 44949173715 scopus 로고    scopus 로고
    • R. Häring, T. Schmitt, A. Able, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W. G. Kaenders cw, 325 nm, 100 mW semiconductor laser system as potential substitute for HeCd gas lasers Photonics West 2008
    • R. Häring, T. Schmitt, A. Able, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W. G. Kaenders "cw, 325 nm, 100 mW semiconductor laser system as potential substitute for HeCd gas lasers" Photonics West 2008


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.