Substrate effect on in-plane dielectric and microwave properties of Ba(Sn0.15Ti0.85)O3 thin films

Materials Research Bulletin

Volumn 43, Issue 8-9, 2008, Pages 2374-2379

  Song, S N ^a   Zhai, J W ^a   Yao, X ^a  

^a TONGJI UNIVERSITY   (China)

Author keywords

A. Thin films; B. Sol gel chemistry; C. X ray diffraction; D. Dielectric properties

Indexed keywords

BARIUM; LITHOGRAPHY; MICROWAVES; TIN; TIN ALLOYS; TINNING; TITANIUM COMPOUNDS;

IN-PLANE (IP); MICROWAVE PROPERTIES; SUBSTRATE EFFECTS;

BARIUM TITANATE;

EID: 44849141721     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2007.08.006     Document Type: Article

References (20)

1. Varadan V.K., Ghodgaonkar D.K., Varadan V.V., Kelly J.F., and Glikerdas P. Microw. J. 35 (1992) 116
2. Babbitt R.W., Koscica T.E., and Drach W.C. Microw. J. 35 (1992) 63
3. Sengupta L., and Sengupta S. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 44 (1997) 792
4. Zhai J.W., Shen B., Yao X., and Zhang L.Y. J. Am. Ceram. Soc. 87 12 (2004) 223
5. Wu T.B., Wu C.M., and Chen M.L. Appl. Phys. Lett. 69 18 (1996) 2659
6. Choi K.J., Biegalski M., Li Y.L., Sharan A., Schubert J., Uecker R., Reiche P., Chen Y.B., Pan X.Q., Gopalan V., Chen L.Q., Schlom D.G., and eom C.B. Science 306 (2004) 1005
7. Haeni J.H., Irvin P., Chang W., Uecker R., Reiche P., Li Y.L., Choudhury S., Tian W., Hawley M.E., Craigo B., Tagantsev A.K., Pan X.Q., Streiffer S.K., Chen L.Q., Kirchoefer S.W., Levy J., and Schlom D.G. Nature (London) 430 (2005) 758
8. Wang D.Y., Wang Y., Zhou X.Y., Chan H.L.W., and Choy C.L. Appl. Phys. Lett. 86 (2005) 221904
9. Lin Y., Chen X., Liu S.W., Chen C.L., Lee J.S., Li Y., Jia Q.X., and Bhalla A. Appl. Phys. Lett. 86 (2005) 142902
10. Liu S.W., Weaver J., Yuan Z., Donner W., Chen C.L., Jiang J.C., Meletis E.I., chang W., Kirchoefer S.W., Horwitz J., and bhalla A. Appl. Phys. Lett. 87 (2005) 142905
11. Majumder S.B., Jain M., Martinrz A., and Kayiyar R.S. J. Appl. Phys. 90 (2001) 896
12. Shaw T.M., Suo Z., huang M., Liniger E., Laibowitz R.B., and Baniecki J.D. Appl. Phys. Lett. 75 (1999) 2129
13. Shin J.C., Ark J., Hwang C.S., and Kim H.J. J. Appl. Phys. 86 (1999) 506
14. Cole M.W., Hubbard C., Ngo E., Ervin M., Wood M., and Geyer R.G. J. Appl. Phys. 92 (2002) 475
15. Kirchoefer S.W., Pond J.M., Carter A.C., Chang W., Aggarwal K.K., Hortwitz J.S., and Chrisey D.B. Microw. Opt. Technol. Lett. 18 (1998) 168
16. Gevorgian S.S., Martinsson T., Linner P.L.J., and Kollberg E.L. IEEE Trans. Microw. Theory Technol. 44 (1996) 896
17. Kim E.K., Moon S.E., Lee S.J., Han S.K., Kang K.Y., and Kim W.J. Ferroelectrics 272 (2002) 333
18. Zhai J.W., Yao X., Xu Z.K., and Chen H. J. Appl. Phys. 100 (2006) 034108
19. Zhai J.W., Shen B., Yao X., and Zhang L.Y. Mater. Res. Bull. 39 (2004) 1599
20. Cole M.W., Joshi P.C., Ervin M.H., Wood M.C., and Pfeffer R.L. Thin Solid Films 374 (2000) 34