Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Sarkar, Smita ^a   Suresh, Arun ^a   Myers, Frank B ^a   Muth, John F ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; MODULATION; MOLECULAR STRUCTURE; OXIDES; REDOX REACTIONS; SEMICONDUCTING ZINC COMPOUNDS; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; ZINC; ZINC OXIDE; ZINC SULFIDE;

AMERICAN INSTITUTE OF PHYSICS (AIP); CHARGE TRANSPORTING; CURRENT CHARACTERISTICS; DISCREET (CO); HYBRID INORGANIC/ORGANIC; INDIUM GALLIUM ZINC OXIDE (INGAZNO); REDOX ACTIVE MOLECULES; REDOX PEAKS; REDOX STATES; SOLID STATES; SOURCE DRAIN CURRENTS; TRANSISTOR CHARACTERISTICS;

MOLECULES;

EID: 44849134389     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2918981     Document Type: Article

References (13)

1. J. R. Heath and M. A. Ratner, Phys. Today PHTOAD 0031-9228 56, 43 (2003).
2. M. A. Reed, C. Zhou, C. J. Muller, T. P. Burgin, and J. M. Tour, Science SCIEAS 0036-8075 10.1126/science.278.5336.252 278, 252 (1997).
3. C. P. Collier, E. W. Wong, M. Belohradsk, F. M. Raymo, J. F. Stoddart, P. J. Kuekes, R. S. Williams, and J. R. Heath, Science SCIEAS 0036-8075 10.1126/science.285.5426.391 285, 391 (1999).
4. Y. Q. Xue, S. Datta, and M. A. Ratner, J. Chem. Phys. JCPSA6 0021-9606 10.1063/1.1391253 115, 4292 (2001).
5. Z. Liu, A. A. Yasseri, J. S. Lindsey, and D. F. Bocian, Science SCIEAS 0036-8075 10.1126/science.1090677 302, 1543 (2003).
6. S. Gowda, G. Mathur, Q. Li, S. Surthi, Q. Zhao, J. S. Lindsey, D. F. Bocian, and V. Misra, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2004, 707.
7. K. M. Roth, A. A. Yasseri, Z. Liu, R. B. Dabke, V. Malinovskii, K. Schweikart, L. Yu, H. Tiznado, F. Zaera, J. S. Lindsey, W. G. Kuhr, and D. F. Bocian, J. Am. Chem. Soc. JACSAT 0002-7863 10.1021/ja021169a 125, 505 (2003).
8. S. Gowda, G. Mathur, Q. Li, S. Surthi, and V. Misra, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X 5, 258 (2006).
9. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) NATUAS 0028-0836 10.1038/nature03090 432, 488 (2004).
10. A. Suresh, P. Wellenius, A. Dhawan, and J. Muth, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2716355 90, 123512 (2007).
11. C. D. Dimitrakopoulos and D. J. Mascarim, IBM J. Res. Dev. IBMJAE 0018-8646 45, 11 (2001).
12. Z. Chen, B. Lee, S. Sarkar, S. Gowda, and V. Misra, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2800824 91, 173111 (2007).
13. R. Chen, H. Kim, P. C. McIntyre, and S. F. Bent, Chem. Mater. CMATEX 0897-4756 10.1021/cm0486666 17, 536 (2005).