Evaluation of electrode-semiconductor barrier in transparent top-contact polymer field effect transistors

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Rao, Manohar ^a   Narayan, K S ^a  

^a JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTROLYSIS; HEALTH; METALLIZING; PHOTOACOUSTIC EFFECT; PHOTOEXCITATION; POLYMERS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TRANSISTORS;

AMERICAN INSTITUTE OF PHYSICS (AIP); INJECTION BARRIERS; OPTICAL EXCITATIONS; POLYMER FIELD-EFFECT TRANSISTORS (PFETS);

FIELD EFFECT TRANSISTORS;

EID: 44849104510     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2938059     Document Type: Article

References (18)

1. C. D. Dimitrakopolous and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0. CO;2-9 14, 99 (2002).
2. R. A. Street and A. Salleo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1512950 81, 2887 (2002).
3. G. Horowitz, R. Hajlaouni, D. Ficouamd, and A. El Kassmi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.369661 85, 3202 (1999).
4. S. D. Wang, T. Minari, T. Miyadera, Y. Aoyagi, and K. Tsukagoshi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2844857 92, 063305 (2008).
5. R. A. B. Devine, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2229979 100, 034508 (2006).
6. R. J. Kline, M. D. Mcgehee, and M. F. Toney, Nat. Mater. NMAACR 1476-1122 10.1038/nmat1590 5, 222 (2006).
7. V. E. Choong, M. G. Mason, C. W. Tang, and Y. Gao, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.121100 72, 2689 (1998).
8. V. I. Arkhipov, E. V. Emelianova, Y. H. Tak, and H. Bassler, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.368146 84, 848 (1998).
9. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, Solid-State Electron. SSELA5 0038-1101 10.1016/S0038-1101(02)00204-6 47, 259 (2003).
10. M. Shur, Physics of Semiconductor Devices (Prentice-Hall, New Delhi, 2002), p. 215
11. R. J. Chesterfield, J. C. McKeen, C. R. Newman, C. D. Frisbie, P. C. Ewbank, K. R. Mann, and L. L. Miller, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1710729 95, 6396 (2004).
12. L. Burgi, H. Sirringhaus, and R. H. Friend, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1470702 80, 2913 (2002).
13. K. S. Narayan and N. Kumar, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1404131 79, 1891 (2001).
14. S. Dutta and K. S. Narayan, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.125208 68, 125208 (2003).
15. N. S. Saricifti, L. Smilowitz, A. J. Heeger, and F. Wudl, Science SCIEAS 0036-8075 10.1126/science.258.5087.1474 258, 1474 (1992).
16. G. Horowitz, R. Hajlaoui, H. Bouchriha, R. Bourguiga, and M. Hajlaoui, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/(SICI)1521-4095(199808)10: 12<923::AID-ADMA923>3.0.CO;2-W 10, 923 (1998).
17. K. Seshadri and C. D. Frisbie, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1345805 78, 993 (2001).
18. L. Burgi, T. J. Richards, R. H. Friend, and H. S. Sirringhaus, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1613369 94, 6129 (2003).