High power SiC MESFETs

Materials Research Society Symposium Proceedings

Volumn 911, Issue , 2006, Pages 425-429

  Harris, Christopher Ian ^a   Konstantinov, Andrei O ^b   Svedberg, Jan Olov ^b   Ray, Ian ^b   Hallin, Christer ^a  

^a Intrinsic Semiconductor Corp   (United States)

^b ENTRINSIC Semiconductor AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; SILICON CARBIDE; THRESHOLD VOLTAGE;

DRAIN EFFICIENCY; OPERATION VOLTAGE; TOTAL POWER OUTPUT;

MESFET DEVICES;

EID: 33750299967     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0911-b10-14     Document Type: Conference Paper

References (2)

1. A. Konstantinov, P. Ericsson and C.I. Harris: Mater. Sci Forum Vol. 389-393, (2001) p. 375
2. C. Harris and A. Konstantinov: US patent 6,127,695.