Silicon carbide amplifiers for communication applications

2000 30th European Microwave Conference, EuMC 2000

Volumn , Issue , 2000, Pages

  Temcamani, Farid ^a   Pouvil, Pierre ^a   Noblanc, Olivier ^b   Brylinski, Christian ^b   Darges, Bernard ^c   Villard, Frédéric ^b   Prigent, Jean Paul ^b  

^a ENSEA   (France)

^b THALES   (France)

^c THOMCAST   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL TELEVISION;

COMMUNICATION APPLICATION; LOAD-PULL; RF-POWER; SILICON-CARBIDE MESFET; THOMSON;

SILICON CARBIDE;

EID: 84897555756     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.2000.338893     Document Type: Conference Paper

References (6)

1. A. W. Morse et al, Recent application of Silicon Carbide to high power microwave, IEEE MTT'S Digest, 1997.
2. S. T. Allen et al, Progress in high power SiC microwave MESFETs, IEEE MTT'S Digest, 1999
3. O. Noblanc et al Microwave Power MESFET on 4H-SiC, Diamond and Related Materials, 1997.
4. Tri T. Ha. "Solid state microwave amplifier design", John Wiley and sons, New York, 1981.
5. O. Noblanc et al, "Progress in the use 4H-SiC of semi-insulating wafers for microwave power MESFETs", ECSCRM-98 proceedings.
6. J. F. Broch et al, "Power amplification with Silicon Carbide MESFET', Microwave and Optical Tech. Lett., volume 23, 1999.