Stoichiometry and characterization of aluminum oxynitride thin films grown by ion-beam-assisted pulsed laser deposition

Thin Solid Films

Volumn 516, Issue 18, 2008, Pages 6215-6219

  Zabinski, J S ^a   Hu, J J ^a   Bultman, J E ^a   Pierce, N A ^a   Voevodin, A A ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Alumina; Aluminum oxynitride; Crystallization; Hardness; Ion beam assisted pulsed laser deposition; Thin film

Indexed keywords

ALUMINUM COMPOUNDS; FILM GROWTH; MECHANICAL PROPERTIES; PULSED LASER DEPOSITION; STOICHIOMETRY;

ALUMINUM OXYNITRIDE; ION-BEAM-ASSISTED PULSED LASER DEPOSITION; NEGATIVE BIAS VOLTAGE;

THIN FILMS;

EID: 44649176929     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.11.120     Document Type: Article

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