Growth of silicon nanocrystal dots with high number density by ultra-high-vacuum chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 B, 2004, Pages 3779-3783

  Naito, Shinya ^a   Satake, Masaki ^a   Kondo, Hiroki ^a   Sakashita, Mitsuo ^a   Sakai, Akira ^a   Zaima, Shigeaki ^a   Yasuda, Yukio ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Amorphous silicon; Crystal growth; Nucleation; Silicon nanocrystal; Ultra high vacuum chemical vapor deposition

Indexed keywords

ATMOSPHOROUS SILICON; SILICON NANOCRYSTALS; THERMAL OXIDATION; ULTRA-HIGH VACUUM;

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEPOSITION; GRAIN SIZE AND SHAPE; IRRADIATION; NANOSTRUCTURED MATERIALS; NUCLEATION; OXIDATION; SUBSTRATES; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; VACUUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4444369480     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.3779     Document Type: Conference Paper

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