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A 108Gb/s 4:1 multiplexer in 0.13μm SiGe-bipolar technology
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A 100-Gbit/s 2:1 multiplexer in InP HEMT technology
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60Gbit/s regenerating demultiplexer in SiGe bipolar technology
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Highly uniform InAlAs-InGaAs HEMT technology for high-speed optical communication system ICs
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0842331304
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Improvement of circuit-speed of HEMTs IC by reducing the parasitic capacitance
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K. Makiyama, T. Takahashi, T. Suzuki, K. Sawada, T. Ohki, M. Nishi, N. Hara, and M. Takikawa, "Improvement of circuit-speed of HEMTs IC by reducing the parasitic capacitance," in Proceedings of IEEE International Electron Devices Meeting, 2003, pp. 727-730.
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