Read-cycle endurance of magnetic random access memory elements

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2631-2633

  Kuroiwa, Takeharu ^a   Takenaga, Takashi ^a   Sadeh, Beysen ^a   Kobayashi, Hiroshi ^a   Sato, Kazunao ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Endurance; Magnetic random access memory (MRAM); Magnetic thin film devices; Magnetoresistance; Tunneling current

Indexed keywords

DEPOSITION; DURABILITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FLASH MEMORY; MAGNETIC FIELDS; MAGNETIC RECORDING; MAGNETIZATION; MAGNETORESISTANCE; MAGNETRON SPUTTERING; SILICON WAFERS; SUBSTRATES; THERMAL EFFECTS; TUNNEL JUNCTIONS;

MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC THIN-FILM DEVICES; MEMORY ELEMENTS; TUNNELING CURRENTS;

RANDOM ACCESS STORAGE;

EID: 4444334715     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.832106     Document Type: Article

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