A 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 15-16

  Sitaram, A R ^a   Abraham, D W ^a   Alof, C ^a   Braun, D ^a   Brown, S ^a   Costrini, G ^a   Findeis, F ^a   Gaidis, M ^a   Galligan, E ^a   Glashauser, W ^a   Gupta, A ^a   Hoenigschmid, H ^a   Hummel, J ^a   Kanakasabapathy, S ^a   Kasko, I ^a   Kim, W ^a   Klostermann, U ^a   Lee, G Y ^a   Leuschner, R ^a   Low, K S ^a   Lu, Yu ^a   Nutzel J ^a   O'Sullivan, E ^a   Park, C ^a   Raberg, W ^a   Robertazzi, R ^a   Sarma, C ^a   Schmid, J ^a   Trouilloud, P L ^a   Worledge, D ^a   Wright, G ^a   Gallagher, W J ^a   Muller G ^a   more..

^a IBM RESEARCH   (United States)

Author keywords

Endurance; FET; Integration; MRAM; Yield

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; MAGNETORESISTANCE; MICROPROCESSOR CHIPS; TUNNEL JUNCTIONS; COMPUTER CIRCUITS; MAGNETIC RECORDING; MRAM DEVICES; OPTIMIZATION;

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM);

RANDOM ACCESS STORAGE; DISTRIBUTION FUNCTIONS;

3 LEVELS; CU METALLIZATION; JUNCTION CELLS; MAGNETIC TUNNEL JUNCTION; MEMORY TECHNOLOGY; NON-VOLATILE-MEMORY APPLICATIONS; PERFORMANCE; TEST CHIPS; YIELD; YIELD ANALYSIS;

EID: 0141426849     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. R. Scheuerlein, et al. "A 10ns read and write nonvolatile memory array using a magnetic tunnel junction and FET switch in each cell" ISSCC Dig. Tech. Papers pp. 128-129, Feb. 2000.
2. S. Tehrani et al. "Nonvolatile RAM based on magnetic tunnel junction elements" ISSCC Dig. Tech. Papers pp130-131, Feb. 2000.
3. M. Motoyoshi et al. "High Performance MRAM Technology with an improved magnetic Tunnel Junction Material" Symp. VLSI Tech. 2002
4. W. Reohr et al. "Memories of Tomorrow" IEEE Circuits and Devices Magazine, Vol. 18, No.5, pp 17-7, September 2002.