Electrical transport in amorphous semiconducting AlMgB 14 films

Applied Physics Letters

Volumn 85, Issue 7, 2004, Pages 1181-1183

  Tian, Y ^a   Li, G ^b   Shinar, J ^b   Wang, N L ^a   Cook, B A ^b   Anderegg, J W ^b   Constant, A P ^a   Russell, A M ^a   Snyder, J E ^a  

^a Iowa State University   (United States)

^b IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION ELECTRONS; DEPOSITION TEMPERATURES; ROOM-TEMPERATURE;

AMORPHOUS FILMS; CARRIER CONCENTRATION; CARRIER MOBILITY; COMPOSITION; DEPOSITION; ELECTRON TRANSITIONS; ENERGY GAP; MICROSTRUCTURE; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 4444331447     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1781738     Document Type: Article

References (19)

1. S. Lee, J. Mazurowski, G. Ramseyer, and P. A. Dowben, J. Appl. Phys. 72, 4925 (1992).
2. S. Hwang, D. Byun, N. J. Ianno, P. A. Dowben, and H. R. Kim, Appl. Phys. Lett. 68, 1495 (1996).
3. S. Hwang, K. Yang, P. A. Dowben, A. A. Ahmad, N. J. Ianno, J. Z. Li, J. Y. Lin, H. X. Jiang, and D. N. McIroy, Appl. Phys. Lett. 70, 1028 (1997).
4. C. Ronning, O. Wondratsohek, M. Büttner, H. Hofsäss, J. Zimmermann, P. Leiderer, and J. Boneberg, Appl. Phys. Lett. 79, 3053 (2001).
5. S. Adenwalla, P. Welsch, A. Harken, J. I. Brand, A. Sezer, and B. W. Robertson, Appl. Phys. Lett. 79, 4357 (2001).
6. C. W. Ong, K. F. Chan, and C. L. Choy, Thin Solid Films 388, 217 (2001).
7. D. Music, V. M. Kugler, Z. Czigány, A. Flink, O. Werner, J. M. Schneider, L. Hultman, and U. Helmersson, J. Vac. Sci. Technol. A 21, 1355 (2003).
8. H. Suematsu, K. Kitajima, T. Suzuki, W. Jiang, K. Yatsui, K. Kurashima, and Y. Bando, Appl. Phys. Lett. 80, 1153 (2002).
9. S. Hwang, N. Remmes, P. A. Dowben, and D. N. McIroy, J. Vac. Sci. Technol. A 15, 854 (1997).
10. D. N. McIroy, S. Hwang, K. Yang, N. Remmes, P. A. Dowben, A. A. Ahmad, N. J. Ianno, J. Z. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. A: Mater. Sci. Process. 67, 335 (1998).
11. B. A. Cook, J. L. Harringa, T. L. Lewis, and A. M. Russell, Scr. Mater. 42, 597 (2000).
12. Y. Tian, A. F. Bastawros, C. C. H. Lo, A. P. Constant, A. M. Russell, and B. A. Cook, Appl. Phys. Lett. 83, 2781 (2003).
13. Y. Tian, A. Constant, C. C. H. Lo, J. W. Anderegg, A. M. Russell, J. E. Snyder, and P. Molian, J. Vac. Sci. Technol. A 21, 1055 (2003).
14. R. Schmechel and H. Werheit, J. Phys.: Condens. Matter 8, 7263 (1996).
15. H. Werheit and U. Kuhlmann, Solid State Commun. 88, 421 (1993).
16. T. L. Lewis, B. A. Cook, J. L. Harringa, and A. M. Russell, Mater. Sci. Eng., A 351, 117 (2003).
17. N. F. Mott and E. A. Davis, Electronic Processes in Noncrystalline Materials (Clarendon, Oxford, 1979), p. 220.
18. Y. Kumashiro, T. Yokoyama, A. Sato, and Y. Ando, J. Solid State Chem. 133, 314 (1997).
19. Y. Kumashiro, Electric Refractory Materials (Marcel Dekker, New York, 2000), p. 591.