Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes

Applied Physics Letters

Volumn 70, Issue 8, 1997, Pages 1028-1030

  Hwang, Seong Don ^a   Yang, Ken ^a   Dowben, P A ^a   Ahmad, Ahmad A ^a   Ianno, N J ^a   Li, J Z ^b   Lin, J Y ^b   Jiang, H X ^b   Mcllroy, D N ^c  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b KANSAS STATE UNIVERSITY   (United States)

^c UNIVERSITY OF IDAHO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BORON CARBIDE; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); FABRICATION; NICKEL; PLASMA APPLICATIONS; THIN FILMS; TUNNEL DIODES; X RAY SPECTROSCOPY;

CARBORANE CAGE MOLECULE; HOMOJUNCTION; NICKELOCENE;

CARBIDES;

EID: 0031078436     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118434     Document Type: Article

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