Optical constants of InN thin films on (111) GaAs grown by reactive magnetron sputtering

Journal of Applied Physics

Volumn 91, Issue 12, 2002, Pages 9803-9808

  Yang, H F ^a   Shen, W Z ^a   Qian, Z G ^a   Pang, Q J ^a   Ogawa, H ^b   Guo, Q X ^b  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; BAND-GAP REGION; DIELECTRIC FUNCTIONS; DIFFERENT MECHANISMS; EXCITONIC CONTRIBUTION; EXTINCTION COEFFICIENT (K); EXTINCTION COEFFICIENTS; FILM QUALITY; FREE CARRIER ABSORPTION; FREE CARRIER CONCENTRATION; GAAS; GAAS SUBSTRATES; GROWTH CONDITIONS; INN THIN FILMS; INTER-BAND TRANSITION; PHOTON ENERGY; REACTIVE MAGNETRON SPUTTERING; RF REACTIVE MAGNETRON SPUTTERING;

CARRIER CONCENTRATION; ENERGY GAP; GALLIUM ARSENIDE; MAGNETRON SPUTTERING; OPTICAL CONSTANTS; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM;

THIN FILMS;

EID: 0037098007     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481189     Document Type: Article

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