SCOPUS 정보 검색 플랫폼

Volumn , Issue 1, 2002, Pages 346-350

Correlation between internal electric fields, residual strain and optical transitions in GaN/AlN stacked quantum dots

(9) Martinez, O a,b Rossi, F a Grillo, V a Mazzoni, M a Armani, N a Salviati, G a Vinattieri, A c Grandjean, N d Damilano, B d

a IMEM CNR (Italy)

b UNIVERSITY OF VALLADOLID (Spain)

c UNIVERSITY OF FLORENCE (Italy)

d CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; BUFFER LAYERS; CATHODOLUMINESCENCE; ELECTRIC FIELDS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; NANOCRYSTALS; NITRIDES; OPTICAL CORRELATION; WIDE BAND GAP SEMICONDUCTORS;

INTERNAL ELECTRIC FIELDS; OPTICAL EMISSIONS; QUANTUM DOT LAYERS; QUANTUM-DOT SIZE; RESIDUAL STRAINS; STACKED QUANTUM DOTS; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL PARAMETER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0442299699 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200390059 Document Type: Conference Paper

Times cited : (2)

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