Effect of thermal treatment on structure of GaN self-assembled quantum dots grown by MOCVD

Physica Status Solidi C: Conferences

Volumn , Issue 4, 2003, Pages 1101-1104

  Hoshino, K ^a   Arakawa, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINED EFFECT; FORMATION PROCESS; GROWTH INTERRUPTION; RIPENING PROCESS; SELF ASSEMBLED QUANTUM DOTS; THERMAL-ANNEALING;

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84875105783     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303003     Document Type: Conference Paper

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