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Volumn 11 PART A, Issue , 2008, Pages 263-266

Generation of SI nanoparticles using plasma technology for novel device and energy storage application

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY STORAGE; INDUCTIVELY COUPLED PLASMA; SEMICONDUCTING FILMS; SILICON; SIZE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY;

EID: 44349142743     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1115/IMECE2007-41800     Document Type: Conference Paper
Times cited : (10)

References (13)
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    • Michele, L.O. and et al., 2001, "Ultraclean Two-Stage Aerosol Reactor for Production of Oxide-Passivated Silicon Nanoparticles for Novel Memory Devices", Journal of The Electrochemical Society, 148, pp. G265-G270.
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    • Michele, L.O.1    and et, al.2
  • 2
    • 33646509445 scopus 로고    scopus 로고
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    • Koliopoulou, S. and et al., 2006, "Metal nano-floating gate memory devices fabricated at low temperature", Microelectronic Engineering, 83, pp. 1563-1566.
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    • Koliopoulou, S.1    and et, al.2
  • 3
    • 1642318994 scopus 로고    scopus 로고
    • NeoSilicon materials and silicon nanodevices
    • Oda, S., 2003, "NeoSilicon materials and silicon nanodevices", Materials Science and Engineering B, 101, pp. 19-23.
    • (2003) Materials Science and Engineering B , vol.101 , pp. 19-23
    • Oda, S.1
  • 4
    • 0344272226 scopus 로고    scopus 로고
    • Nanocrystalline Silicon Dots Fabricated by Pulse RF Plasma-Enhanced Chemical Vapor Deposition of SiC14-and-H2 Mixture
    • Letters
    • Shirai, H. and et al., 2003, "Nanocrystalline Silicon Dots Fabricated by Pulse RF Plasma-Enhanced Chemical Vapor Deposition of SiC14-and-H2 Mixture", Japanese journal of Applied Physics Part 2, Letters, 42, pp. L1191-L1194.
    • (2003) Japanese journal of Applied Physics , vol.42 , Issue.PART 2
    • Shirai, H.1    and et, al.2
  • 5
    • 85196542641 scopus 로고    scopus 로고
    • Y., F. and et al., 2000, Carrier conduction in a Sinanocrystal-based single electron transistor-I. Effect of gate bias, Superlattice Microstructure, 28, pp. 177-187.
    • Y., F. and et al., 2000, "Carrier conduction in a Sinanocrystal-based single electron transistor-I. Effect of gate bias", Superlattice Microstructure, 28, pp. 177-187.
  • 6
    • 0042934083 scopus 로고    scopus 로고
    • Synthesis of highly oriented, single-crystal silicon nanoparticles in a lowpressure, inductively coupled plasma
    • Ameya, B. and et al., 2003, "Synthesis of highly oriented, single-crystal silicon nanoparticles in a lowpressure, inductively coupled plasma", Journal of Applied Physics, 94, pp. 1969-1974.
    • (2003) Journal of Applied Physics , vol.94 , pp. 1969-1974
    • Ameya, B.1    and et, al.2
  • 7
    • 33947515567 scopus 로고    scopus 로고
    • Parrallel patterning of nanoparticles via electrodynamic focusing of charged aerosols, Nature
    • Kim, H. and et al., 2006, "Parrallel patterning of nanoparticles via electrodynamic focusing of charged aerosols", Nature Nanotechnology, 1, pp. 117-121.
    • (2006) Nanotechnology , vol.1 , pp. 117-121
    • Kim, H.1    and et, al.2
  • 8
    • 34147194585 scopus 로고    scopus 로고
    • Negative Dielectrophoretic Patterning with Colloidal Particles and Encapsulation into a Hydrogel
    • Suzuki, M. and et al., 2007, "Negative Dielectrophoretic Patterning with Colloidal Particles and Encapsulation into a Hydrogel", Langmuir, 23, pp. 4088-4094.
    • (2007) Langmuir , vol.23 , pp. 4088-4094
    • Suzuki, M.1    and et, al.2
  • 10
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    • Particulate formation and dusty plasma behaviour in argon-silane RF discharge
    • Bouchoule, A. and Boufendi, L., 1993, "Particulate formation and dusty plasma behaviour in argon-silane RF discharge", Plasmasources Science and Technology, 2, pp. 204-213.
    • (1993) Plasmasources Science and Technology , vol.2 , pp. 204-213
    • Bouchoule, A.1    Boufendi, L.2
  • 11
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    • Preparation of nanocrystalline silicon quantum dot structure by a digital plasma process
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.