Nanocrystalline Silicon Dots Fabricated by Pulse RF Plasma-Enhanced Chemical Vapor Deposition of SiCl4-and-H2 Mixture

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 10 A, 2003, Pages

  Shirai, Hajime ^a   Seri, Yasuhiro ^a   Jia, Haijun ^a   Kurosaki, Ken Ichi ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

nc Si; Photoluminescence; Pulse discharge; rf plasma CVD; SiCl4

Indexed keywords

ATOMIC FORCE MICROSCOPY; DENSITY (OPTICAL); ELLIPSOMETRY; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PULSE MODULATION; SILICON; SPECTROSCOPIC ANALYSIS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VOLUME FRACTION;

PULSE DISCHARGES; SPECTROSCOPIC ELLIPSOMETRY;

NANOSTRUCTURED MATERIALS;

EID: 0344272226     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1191     Document Type: Article

References (19)

1. A. Richer, P. Steiner, F. Kozlowski and W. Lag: IEEE Electron Device Lett. 12 (1991) 691.
2. N. Koshida and H. Koyama: Appl. Phys. Lett. 60 (1992) 708.
3. A. Nakajima, Y. Sugita, K. kawamura, H. Tomita and N. Yokoyama; Jpn. J. Appl. Phys. 35 (1996) L189.
4. K. Nakagawa, M. Fukuda, S. Miyazaki and M. Hirose: Mater. Res. Soc. Symp. Proc. 452 (1997) 234.
5. P. Photoloulos, A. G. Nassiopoulou, D. N. Kouvatsos and A. Travlos: Appl. Phys. Lett. 76 (2000) 3588.
6. Y. Fujimura, S. H. Jung and H. Shirai: Jpn. J. Appl. Phys. 40 (2001) L1271.
7. H. Shirai, S. H. Jung, Y. Fujimura and Y. Toyoshima: J. Non-Cryst. Solids 298-302 (2002) 118.
8. H. Shirai, Y. Fujimura and S. H. Jung: Thin Solid Films 407 (2002) 12.
9. Y. Fujimura and H. Shirai: Jpn. J. Appl. Phys. 41 (2002) L1161.
10. H. Shirai, K. Kurosaki and T. Tsukamoto: Physica E 16 (2003) 388.
11. L. J. Overzat and J. T. Verdeyen: Appl. Phys. Lett. 48 (1986) 695.
12. Y. Watanabe, M. Shiratani, Y. Kubo, I. Ogawa and S. Ogi: Appl. Phys. Lett. 53 (1988) 1263.
13. M. Shiratani, S. Matsuno and Y. Watanabe: Jpn. J. Appl. Phys. 30 (1991) 1887.
14. K. Kurosaki, K. Hashimoto, A. Nakao and H. Shirai: to be published in Jpn. J. Appl. Phys. 42 (2003).
15. S. Adachi: Optical Properties of Crystalline and Amorphous Semiconductors (Kluwer Academic Publishers, Boston, 1999).
16. D. A. G. Bruggeman: Ann. Phys. 24 (1935) 636.
17. G. Brunno, P. Capezzuto and G. Cicala: Plasma Deposition of Amorphous Silicon-Based Materials, eds. G. Bruno, P. Capezzuto and A. Madan (Academic Press, Boston, 1995) Chap. 1.
18. G. Cicala, M. Losurdo, P. Capezzuto and G. Bruno: Plasma Source Sci. Technol. 1 (1992) 156.
19. D. W. Jones, E. Kaldis, A. I. Mlavki, D. W. Shaw and G. A. Wolff: Crystal Growth Theory and Technique, ed. C. H. Goodman (Plenum Press, New York, 1974) p. 55.