Nitride based FinFLASH memory device using multilevel hot carrier program/erase

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Volumn , Issue , 2007, Pages 46-47

  Breuil, L ^a   Rosmeulen, M ^a   Cacciato, A ^a   Loo, J ^a   Furnemont A ^a   Haspeslagh, L ^a   Van Houdt, J ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CIVIL AVIATION; ELECTRIC CONDUCTIVITY; HEALTH; HOT CARRIERS; NITRIDES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE; SEPARATION; WINDOWS;

CARRIER (CO); CHARGE SENSING; MULTI LEVEL (ML); NON-VOLATILE; OPERATING WINDOWS; READ DISTURB; READING SCHEME; SEMICONDUCTOR MEMORIES; STATES OF CHARGE (SOC);

DATA STORAGE EQUIPMENT;

EID: 48649109826     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2007.4290575     Document Type: Conference Paper

References (7)

1. F. Hofmann et al., Proc. ICMTD, 2005
2. P. Xuan et al., IEEE Proc. IEDM, 2003
3. S-K Sung et al., Trans. Nanotech., IEEE Vol. 5, Issue 3, pp. 174-179, 2006
4. E-S. Cho et al. IEEE Proc. VLSI 2006
5. J-R Hwang et al., IEEE Proc. VLSI 2005
6. M.Specht et al., IEEE Proc. IEDM 2004
7. L. Breuil et al. Proc. ICMTD 2007