High Performance/Reliability Cu Interconnect with Selective CoWP Cap

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 109-110

  Ko, T ^a   Chang, C L ^a   Chou, S W ^a   Lin, M W ^a   Lin, C J ^a   Shih, C H ^a   Su, H W ^a   Tsai, M H ^a   Shue, Winston S ^a   Liang, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Cap layer; CoWP; Reliability

Indexed keywords

ADHESION; CHEMICAL MECHANICAL POLISHING; COBALT COMPOUNDS; FAILURE ANALYSIS; LEAKAGE CURRENTS; MORPHOLOGY; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; INTEGRATED CIRCUIT INTERCONNECTS;

SURFACE MIGRATION;

ELECTRIC CONNECTORS; COPPER;

% REDUCTIONS; AND RELIABILITY; CAP LAYERS; CMP PROCESS; CU INTERCONNECT; DIELECTRIC CAPS; METAL CAP; PERFORMANCE RELIABILITY; RC DELAY; SURFACE MIGRATION;

EID: 0141426813     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. P. Besser, et al., 2000 International Electron Devices Meeting, pp. 119-122, 2000.
2. C.-K Hu, et al., Applied Physics Letters, vol. 81, no. 10, pp. 1782-1784, September, 2002.
3. T. Itabashi, et al., 2002 International Interconnect Technology Conference, pp. 285-287, 2002.
4. C.-K Hu, et al., IBM J. Res. Develop., vol. 39, no. 4, pp. 465-497, July 1995.
5. C.-K Hu, 1998 Mat. Res. Soc. Symp. Proc., vol. 511, pp. 305-315, 1998.