Ground-state properties of boron-doped diamond

Journal of Experimental and Theoretical Physics

Volumn 106, Issue 4, 2008, Pages 781-787

  Zarechnaya, E Yu ^a   Isaev, E I ^a,c   Simak, S I ^c   Vekilov, Yu Kh ^a   Dubrovinsky, L S ^b   Dubrovinskaia, N A ^d   Abrikosov, I A ^c  

^a NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^b UNIVERSITÄT BAYREUTH   (Germany)

^c LINKÖPING UNIVERSITY   (Sweden)

^d UNIVERSITY OF HEIDELBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; GROUND STATE; LATTICE CONSTANTS;

BORON DOPED DIAMOND; INTERSTITIAL POSITIONS;

DIAMONDS;

EID: 44349095813     PISSN: 10637761     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063776108040171     Document Type: Article

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