Dielectric properties of single crystal diamond

Semiconductor Science and Technology

Volumn 20, Issue 3, 2005, Pages 296-298

  Ye, Haitao ^a,c   Yan, Haixue ^b   Jackman, Richard B ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CRYSTALLIZATION; DIAMONDS; DIELECTRIC PROPERTIES; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATORS; IONIZATION; OHMIC CONTACTS;

BOLTZMANN CONSTANT; DIELECTRIC LOSS; DIELECTRIC MEASUREMENT; DIPOLE MOMENTS;

SINGLE CRYSTALS;

EID: 14844317322     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/3/007     Document Type: Article

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