Calculation of the hole concentration in boron-doped diamond

Journal of Applied Physics

Volumn 85, Issue 3, 1999, Pages 1409-1422

  Fontaine, Frédéric ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001552302     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369272     Document Type: Article

References (30)

1. A. T. Collins and A. W. S. Williams, J. Phys. C 4, 1789 (1971).
2. D. M. Malta, J. A. von Windheim, H. A. Wynands, and B. A. Fox, J. Appl. Phys. 77, 1536 (1995).
3. T. H. Borst and O. Weis, Diamond Relat. Mater. 4, 948 (1995).
4. E. P. Visser, G. J. Bauhuis, G. Janssen, W. Vollenberg, W. J. P. van Enckevort, and L. J. Gilling, J. Phys.: Condens. Matter 4, 7365 (1992).
5. F. Fontaine, C. Uzan-Saguy, B. Philosoph, and R. Kalish, Appl. Phys. Lett. 68, 2264 (1996).
6. A. T. Collins, in Properties and Growth of Diamond, edited by G. Davies (INSPEC, London, 1994), p. 275, and references therein.
7. G. L. Pearson and J. Bardeen, Phys. Rev. 75, 865 (1949).
8. P. P. Debye and E. M. Conwell, Phys. Rev. 93, 693 (1954).
9. J. Leloup, H. Djerassi, J. H. Albany, and J. B. Mullin, J. Appl. Phys. 49, 3359 (1978).
10. R. Locher, J. Wagner, F. Fuchs, M. Maier, P. Gonon, and P. Koidl, Diamond Relat. Mater. 4, 678 (1995).
11. G. W. Lehman and H. M. James, Phys. Rev. 100, 1698 (1955).
12. G. F. Neumark, Phys. Rev. B 5, 408 (1972).
13. T. F. Lee and T. C. McGill, J. Appl. Phys. 46, 373 (1975).
14. D. Schechter, J. Appl. Phys. 61, 591 (1987).
15. A. L. Lin, Appl. Phys. Lett. 53, 776 (1988).
16. C. J. Rauch, in Proceedings of the International Conference on Physics of Semiconductors, edited by A. C. Stickland (The Institute of Physics and the Physical Society, London, 1962), p. 276.
17. P. J. Dean, E. C. Lightowlers, and D. R. Wight, Phys. Rev. 140, A352 (1965).
18. A. T. Collins, in Thin Film Diamond, edited by A. Lettington and J. W. Steeds (Chapman&Hall, London, 1994), p. 67.
19. G. W. Castellan and R. Seitz, Semiconducting Materials (Butterworths, London, 1951), p. 8.
20. V. B. Glasko and A. G. Mirmov, Sov. Phys. Acoust. 4, 241 (1962).
21. F. Stern, Phys. Rev. B 9, 4597 (1974).
22. E. O. Kane, Phys. Rev. 131, 79 (1963).
23. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semi-conductors (Springer, Berlin, 1984), p. 257.
24. P. K. Chakraborty and J. C. Biswas, J. Appl. Phys. 82, 3328 (1997).
25. A. Baldareschi and N. O. Lipari, Phys. Rev. B 8, 2697 (1973).
26. F. Bassani, G. Iadonisi, and B. Preziosi, Rep. Prog. Phys. 37, 1099 (1974).
27. M. Werner, R. Job, A. Zaitzev, W. R. Fahrner, W. Seiffert, C. Johnston, and P. R. Chalker, Phys. Status Solidi A 154, 385 (1996).
28. E. O. Kane, Solid-State Electron. 28, 1 (1985).
29. Y. P. Varshni, Physica (Amsterdam) 34, 149 (1967).
30. U. Lindefelt, J. Appl. Phys. 84, 2628 (1998).