Control of carrier concentration and surface flattening of CuGaO2 epitaxial films for a p-channel transparent transistor

Thin Solid Films

Volumn 516, Issue 17, 2008, Pages 5790-5794

  Mine, Takashi ^a   Yanagi, Hiroshi ^a   Nomura, Kenji ^b   Kamiya, Toshio ^a,b   Hirano, Masahiro ^a,b   Hosono, Hideo ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Carrier control; p type conduction; Transparent conducting oxide; Transparent thin film transistor

Indexed keywords

CARRIER CONCENTRATION; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; PULSED LASER DEPOSITION; THIN FILM TRANSISTORS; YTTRIA STABILIZED ZIRCONIA;

CARRIER CONTROL; P-TYPE CONDUCTION; SINGLE-PHASE EPITAXIAL FILMS; SURFACE FLATTENING; TRANSPARENT CONDUCTING OXIDES; TRANSPARENT THIN FILM TRANSISTORS;

EPITAXIAL FILMS;

EID: 44249090000     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.10.072     Document Type: Article

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